Anodic Aluminum Oxide Membrane-Assisted Fabrication of β-In2S3Nanowires

Anodic Aluminum Oxide Membrane-Assisted Fabrication of β-In2S3Nanowires

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Abstract In this study, β-In2S3nanowires were first synthesized by sulfurizing the pure Indium (In) nanowires in an AAO iphone xr price calgary membrane.As FE-SEM results, β-In2S3nanowires are highly ordered, arranged tightly corresponding to the high porosity of the AAO membrane used.The diameter of the β-In2S3nanowires is about 60 nm with the length of about 6–8 μm.Moreover, the aspect ratio of β-In2S3nanowires is up to 117.

An EDS analysis revealed the β-In2S3nanowires with soiebiologique.com an atomic ratio of nearly S/In = 1.5.X-ray diffraction and corresponding selected area electron diffraction patterns demonstrated that the β-In2S3nanowire is tetragonal polycrystalline.The direct band gap energy (Eg) is 2.

40 eV from the optical measurement, and it is reasonable with literature.